M. Bawedin: search on Z-Library

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1

[IEEE 2019 International Conference on IC Design and Technology (ICICDT) - SUZHOU, China (2019.6.17-2019.6.19)] 2019 International Conference on IC Design and Technology (ICICDT) - 1T1C Ultra low power relative Thermal-Voltage sensor in 28nm UTBB FD-SOI CMOS technology for standard, spatial and quantum applications

Galy, Ph., Lethiecq, R., Bawedin, M.

Year:

2019

Language:

english

File:

PDF, 1.15 MB

english, 2019

2

A review of electrical characterization techniques for ultrathin FDSOI materials and devices

Cristoloveanu, Sorin, Bawedin, Maryline, Ionica, Irina

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 5.88 MB

english, 2016

3

Enhanced coupling effects in vertical double-gate FinFETs

Chang, Sung-Jae, Bawedin, Maryline, Guo, Yufeng, Liu, Fanyu, Akarvardar, Kerem, Lee, Jong-Hyun, Lee, Jung-Hee, Ionica, Irina, Cristoloveanu, Sorin

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 5.06 MB

english, 2014

4

[IEEE 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Granada (2018.3.19-2018.3.21)] 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Nanoindentation effects on the electrical caracterizaron in Ψ-MOSFET configuration

Benea, Licinius, Cerba, Tiphaine, Bawedin, Maryline, Delacour, Cecile, Cristoloveanu, Sorin, Ionica, Irina

Year:

2018

Language:

english

File:

PDF, 451 KB

english, 2018

5

New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs

J. El Husseini, F. Martinez, J. Armand, M. Bawedin, M. Valenza, R. Ritzenthaler, F. Lime, B. Iñiguez, O. Faynot, C. Le Royer

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 493 KB

english, 2011

6

LDMOS in SOI technology with very-thin silicon film

M. Bawedin, C. Renaux, D. Flandre

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 561 KB

english, 2004

7

Thin film fully-depleted SOI four-gate transistors

K. Akarvardar, S. Cristoloveanu, M. Bawedin, P. Gentil, B.J. Blalock, D. Flandre

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 1.00 MB

english, 2007

8

Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications

M. Bawedin, S. Cristoloveanu, D. Flandre, F. Udrea

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.15 MB

english, 2010

9

FinFlash with buried storage ONO layer for flash memory application

Sung-Jae Chang, Maryline Bawedin, Wade Xiong, Jong-Hyun Lee, Jung-Hee Lee, Sorin Cristoloveanu

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 1.75 MB

english, 2012

10

Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique

M. Valenza, J. El Husseini, F. Martinez, M. Bawedin, C. Le Royer, J.F. Damlencourt

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 786 KB

english, 2012

11

High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

Im, Ki-Sik, Won, Chul-Ho, Jo, Young-Woo, Lee, Jae-Hoon, Bawedin, Maryline, Cristoloveanu, Sorin, Lee, Jung-Hee

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.50 MB

english, 2013

12

Characteristics of GaN and AlGaN/GaN FinFETs

Im, Ki-Sik, Kang, Hee-Sung, Lee, Jae-Hoon, Chang, Sung-Jae, Cristoloveanu, Sorin, Bawedin, Maryline, Lee, Jung-Hee

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.53 MB

english, 2014

13

Remote carrier trapping in FinFETs with ONO buried layer: Temperature effects

Chang, Sung-Jae, Bawedin, Maryline, Xiong, Wade, Lee, Jong-Hyun, Lee, Jung-Hee, Cristoloveanu, Sorin

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.82 MB

english, 2013

14

[IEEE 2011 12th International Conference on Ultimate Integration on Silicon (ULIS) - Cork, Ireland (2011.03.14-2011.03.16)] Ulis 2011 Ultimate Integration on Silicon - A surface potential based compact model for lightly doped FD SOI MOSFETs with ultra-thin body

Husseini, J. El, Martinez, F., Bawedin, M., Valenza, M., Ritzenthaler, R., Lime, F., Iniguez, B.

Year:

2011

Language:

english

File:

PDF, 102 KB

english, 2011

15

Parasitic bipolar effect in ultra-thin FD SOI MOSFETs

Liu, F.Y., Ionica, I., Bawedin, M., Cristoloveanu, S.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.32 MB

english, 2015

16

[IEEE ESSDERC 2015 - 45th European Solid-State Device Research Conference - Graz, Austria (2015.9.14-2015.9.18)] 2015 45th European Solid State Device Research Conference (ESSDERC) - Back-gate effects and detailed characterization of junctionless transistor

Parihar, Mukta Singh, Liu, Fan Yu, Navarro, Carlos, Barraud, Sylvain, Bawedin, Maryline, Ionica, Irina, Kranti, Abhinav, Cristoloveanu, Sorin

Year:

2015

File:

PDF, 278 KB

2015

17

High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs

Umana-Membreno, G.A., Chang, S.-J., Bawedin, M., Antoszewski, J., Cristoloveanu, S., Faraone, L.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.25 MB

english, 2015

18

Back-gate effects and mobility characterization in junctionless transistor

Parihar, Mukta Singh, Liu, Fanyu, Navarro, Carlos, Barraud, Sylvain, Bawedin, Maryline, Ionica, Irina, Kranti, Abhinav, Cristoloveanu, Sorin

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 954 KB

english, 2016

19

Back-gated InGaAs-On-Insulator Lateral N+NN+ MOSFET : Fabrication and Typical Conduction Mechanisms

Park, H.J., Pirro, L., Czornomaz, L., Ionica, I., Bawedin, M., Djara, V., Deshpande, V., Cristoloveanu, S.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.04 MB

english, 2016

20

[IEEE ESSDERC 2016 - 46th European Solid-State Device Research Conference - Lausanne, Switzerland (2016.9.12-2016.9.15)] 2016 46th European Solid-State Device Research Conference (ESSDERC) - FDSOI devices: Issues and innovative solutions

Cristoloveanu, Sorin, Bawedin, Maryline

Year:

2016

Language:

english

File:

PDF, 2.71 MB

english, 2016

21

[IEEE 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Burlingame, CA, USA (2016.10.10-2016.10.13)] 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory

Dirani, H. El, Bawedin, M., Lee, K., Parihar, M., Mescot, X., Fonteneau, P., Galy, Ph., Gamiz, F., Kim, Y-T., Ferrari, P., Cristoloveanu, S.

Year:

2016

Language:

english

File:

PDF, 449 KB

english, 2016

22

Out-of-Equilibrium Body Potential Measurements in Pseudo-MOSFET for Sensing Applications

Benea, Licinius, Bawedin, Maryline, Delacour, Cécile, Ionica, Irina

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.38 MB

english, 2017

23

Kink effect in ultrathin FDSOI MOSFETs

Park, H.J., Bawedin, M., Choi, H.G., Cristoloveanu, S.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.32 MB

english, 2017

24

Performance Improvement and Sub-60 mV/Decade Swing in AlGaN/GaN FinFETs by Simultaneous Activation of 2DEG and Sidewall MOS Channels

Xu, Yue, Cristoloveanu, Sorin, Bawedin, Maryline, Im, Ki-Sik, Lee, Jung-Hee

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.51 MB

english, 2018

25

[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia, Romania (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - ψ-MOSFET Configuration for DNA Detection

Benea, Licinius, Bawedin, Maryline, Cristoloveanu, Sorin, Ionica, Irina, Banu, Melania, Simion, Monica, Kusko, Mihaela, Delacour, Cecile

Year:

2018

Language:

english

File:

PDF, 854 KB

english, 2018

26

The meta-stable dip (MSD) effect in SOI FinFETs

Jang-Gn Yun, Maryline Bawedin, Sorin Cristoloveanu, Denis Flandre, Hi-Deok Lee

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 217 KB

english, 2007

27

A FinFET memory with remote carrier trapping in ONO buried insulator

S.-J. Chang, M. Bawedin, W. Xiong, S.C. Jeon, J.-H. Lee, S. Cristoloveanu

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 763 KB

english, 2011

28

A comparative 1/f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

M. Valenza, J. El Husseini, J. Gyani, F. Martinez, M. Bawedin, C. Le Royer, E. Augendre, J.F. Damlencourt

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 602 KB

english, 2011

29

A new memory effect (MSD) in fully depleted SOI MOSFETs

M. Bawedin, S. Cristoloveanu, J.G. Yun, D. Flandre

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 784 KB

english, 2005

30

Innovating SOI memory devices based on floating-body effects

M. Bawedin, S. Cristoloveanu, D. Flandre

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 776 KB

english, 2007

31

DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT

M. Bawedin, M.J. Uren, F. Udrea

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 575 KB

english, 2010

32

Double-gate 1T-DRAM cell using nonvolatile memory function for improved performance

Ki-Heung Park, Sorin Cristoloveanu, Maryline Bawedin, Youngho Bae, Kyoung-Il Na, Jong-Ho Lee

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.23 MB

english, 2011

33

Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs

A. Hubert, M. Bawedin, S. Cristoloveanu, T. Ernst

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 756 KB

english, 2009

34

SOI 1T-DRAM cells with variable channel length and thickness: Experimental comparison of programming mechanisms

Alexandre Hubert, Maryline Bawedin, Georges Guegan, Thomas Ernst, Olivier Faynot, Sorin Cristoloveanu

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 823 KB

english, 2011

35

Fully depleted double-gate MSDRAM cell with additional nonvolatile functionality

Ki-Heung Park, Maryline Bawedin, Jong-Ho Lee, Young-Ho Bae, Kyoung-Il Na, Jung-Hee Lee, Sorin Cristoloveanu

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 1.29 MB

english, 2012

36

[IEEE 2012 IEEE International SOI Conference - Napa, CA, USA (2012.10.1-2012.10.4)] 2012 IEEE International SOI Conference (SOI) - Innovative capacitorless SOI DRAMs

Cristoloveanu, S., Bawedin, M., Wan, J., Chang, S.-J., Navarro, C., Zaslavsky, A., Le Royer, C., Andrieu, F., Rodriguez, N., Gamiz, F.

Year:

2012

Language:

english

File:

PDF, 542 KB

english, 2012

37

FinFETs with ONO BOX for multi-bit unified memory

Chang, Sung-Jae, Bawedin, Maryline, Xiong, Wade, Lee, Jong-Hyun, Lee, Jung-Hee, Cristoloveanu, Sorin

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.35 MB

english, 2013

38

Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors

Chang, Sung-Jae, Cheralathan, Muthupandian, Bawedin, Maryline, Iniguez, Benjamin, Bayraktaroglu, Burhan, Lee, Jong-Hyun, Lee, Jung-Hee, Cristoloveanu, Sorin

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.45 MB

english, 2013

39

Total Dose Effects on the Performance of Irradiated Capacitorless MSDRAM Cells

El-Mamouni, Farah, Bawedin, Maryline, Zhang, Enxia X., Schrimpf, Ronald D., Fleetwood, Daniel M., Cristoloveanu, Sorin

Journal:

IEEE Transactions on Nuclear Science

Year:

2010

Language:

english

File:

PDF, 397 KB

english, 2010

40

[IEEE 2013 21st International Conference on Applied Electromagnetics and Communications (ICECom) - Dubrovnik, Croatia (2013.10.14-2013.10.16)] ICECom 2013 - Temperature, back gate and polarization studies in nanotransistor based THz plasma detectors

Knap, W., But, D., Bawedin, M., Chang, S., Klimenko, O., Dyakonova, N., Coquillat, D., El Fatimy, A., Teppe, F., Gutin, A., Nagatsuma, T., Cristoloveanu, S.

Year:

2013

Language:

english

File:

PDF, 592 KB

english, 2013

41

Mobility Investigation by Geometrical Magnetoresistance in Fully Depleted MOSFETs and FinFETs

Chang, Sung-Jae, Bawedin, Maryline, Cristoloveanu, Sorin

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 1.62 MB

english, 2014

42

[IEEE 2011 IEEE 14th International Symposium on Electrets ISE 14 - Montpellier, France (2011.08.28-2011.08.31)] 2011 - 14th International Symposium on Electrets - 1T-DRAM at the 22nm technology node and beyond: An alternative to DRAM with high-k storage capacitor

Bawedin, M., Cristoloveanu, S., Hubert, A., Guegan, G., Chang, S.J., Sagnes, B., Martinez, F., Pascal, F., Valenza, M., Hoffmann, A.

Year:

2011

Language:

english

File:

PDF, 374 KB

english, 2011

43

Foreword

Bawedin, Maryline

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 140 KB

english, 2013

44

Overestimation of Short-Channel Effects Due to Intergate Coupling in Advanced FD-SOI MOSFETs

Navarro, Carlos, Bawedin, Maryline, Andrieu, Francois, Cristoloveanu, Sorin

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 3.33 MB

english, 2014

45

[IEEE 2007 14th International Conference on Mixed Design of Integrated Circuits and Systems - Ciechocinek, Poland (2007.06.21-2007.06.23)] 2007 14th International Conference on Mixed Design of Integrated Circuits and Systems - Experiments and Modeling of Dynamic Floating Body Effects in 1T-Dram Fully Depleted SOI Devices

Bawedin, M., Cristoloveanu, S., Dessard, V., Flandre, D.

Year:

2007

Language:

english

File:

PDF, 405 KB

english, 2007

46

[IEEE 2005 IEEE International SOI Conference - Honolulu, HI, USA (3-6 Oct. 2005)] 2005 IEEE International SOI Conference Proceedings - Unusual gate current transient behavior in SOI MOSFETs

Bawedin, M., Cristoloveanu, S., Flandre, D.

Year:

2005

Language:

english

File:

PDF, 1.78 MB

english, 2005

47

[IEEE 2004 IEEE International SOI Conference - Charleston, SC, USA (4-7 Oct. 2004)] 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573) - Unusual floating body effect in fully depleted MOSFETs

Bawedin, M., Cristoloveanu, S., Flandre, D.

Year:

2004

Language:

english

File:

PDF, 165 KB

english, 2004

48

[IEEE 2011 IEEE International SOI Conference - Tempe, AZ, USA (2011.10.3-2011.10.6)] IEEE 2011 International SOI Conference - Low-temperature properties of ZnO on Insulator MOSFETs

Chang, S.-J., Bawedin, M., Bayraktaroglu, B., Lee, J.-H., Cristoloveanu, S.

Year:

2011

Language:

english

File:

PDF, 811 KB

english, 2011

49

[IEEE ESSDERC 2013 - 43rd European Solid State Device Research Conference - Bucharest, Romania (2013.09.16-2013.09.20)] 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - Why are SCE overestimated in FD-SOI MOSFETs?

Navarro, C., Bawedin, M., Andrieu, F., Sagnes, B., Cristolovcanu, S.

Year:

2013

Language:

english

File:

PDF, 1.12 MB

english, 2013

50

[IEEE 2011 21st International Conference on Noise and Fluctuations (ICNF) - Toronto, ON, Canada (2011.06.12-2011.06.16)] 2011 21st International Conference on Noise and Fluctuations - Low frequency noise modeling of SOI MOSFETs using Green's function approach

ElHusseini, J., Martinez, F., Armand, J., Bawedin, M., Valenza, M., Pascal, F., Ritzenthaler, R., Lime, F., Iniguez, B., Faynot, Olivier

Year:

2011

Language:

english

File:

PDF, 301 KB

english, 2011

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